Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy

被引：38

作者：

Shibata, M ^{[1
]}

Nitta, Y ^{[1
]}

Fujita, K ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Ibaraki 3050046, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期

关键词：

D O I：

10.1063/1.122415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using scanning tunneling microscopy (STM), nanometer-scale Si(111) and Si(001) windows in ultrathin SiO2 films are fabricated by electron-beam-induced thermal decomposition. At 450-630 degrees C, the oxidized Si surfaces are irradiated with a field emission electron beam from a STM tip with an energy of 70-150 eV and a current of 10-50 nA. The smallest window size is about 40 nm. The shape of the Si crystals selectively grown on the Si(001) windows is that of a frustum of a quadrangular pyramid, while that on the Si(111) windows is an (111) oriented two-dimensional island. We discuss the influence of the field emission electrons on the fabrication and the selective growth. (C) 1998 American Institute of Physics. [S0003-6951(98)04441-6].

引用

页码：2179 / 2181

页数：3

共 12 条

[1]

BINH VT, 1994, APPL PHYS LETT, V65, P2493, DOI 10.1063/1.112648

[2] SiH4 chemical vapor deposition on Si(111)-(7x7) studied by scanning tunneling microscopy [J].

Fehrenbacher, M ;

Rauscher, H ;

Memmert, U ;

Behm, RJ .

SURFACE SCIENCE, 1997, 385 (01) :123-145

[3] Nucleation along step edges during Si epitaxial growth on the Si(111)surface observed by STM [J].

Fujita, K ;

Kusumi, Y ;

Ichikawa, M .

SURFACE SCIENCE, 1997, 380 (01) :66-74

[4] Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films [J].

Fujita, K ;

Watanabe, H ;

Ichikawa, M .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2807-2809

[5] Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams [J].

Fujita, S ;

Maruno, S ;

Watanabe, H ;

Ichikawa, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1493-1498

[6] SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY [J].

HIRAYAMA, H ;

TATSUMI, T ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2242-2243

[7] Low energy electron beam stimulated surface reaction:: Selective etching of SiO2/Si using scanning tunneling microscope [J].

Li, N ;

Yoshinobu, T ;

Iwasaki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (8B) :L995-L998

[8] Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film [J].

Shklyaev, AA ;

Shibata, M ;

Ichikawa, M .

APPLIED PHYSICS LETTERS, 1998, 72 (03) :320-322

[9] BEHAVIORS OF HYDROGEN AND OXYGEN ON CLANED SILICON SURFACES [J].

UEDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A) :1524-1527

[10] Thermal decomposition of ultrathin oxide layers on Si(111) surfaces mediated by surface Si transport [J].

Watanabe, H ;

Fujita, K ;

Ichikawa, M .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1095-1097

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