Nucleation along step edges during Si epitaxial growth on the Si(111)surface observed by STM

被引：27

作者：

Fujita, K

Kusumi, Y

Ichikawa, M

机构：

[1] Jt. Res. Center for Atom Technology, Angstrom Technology Partnership, Tsukuba, Ibaraki 305

来源：

SURFACE SCIENCE | 1997年 / 380卷 / 01期

关键词：

disilane; gallium; growth; nucleation; scanning tunneling microscopy; silicon; vicinal single crystal surfaces; TRANSMISSION ELECTRON-DIFFRACTION; SCANNING-TUNNELING-MICROSCOPY; SILICON; SURFACE; SI(111)-7X7; DISILANE; SI2H6;

D O I：

10.1016/S0039-6028(97)00018-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nucleation on the Si(lll) surface during Si epitaxial growth was investigated by scanning tunneling microscopy combined with chemical beam epitaxy. It was found that two-dimensional nuclei align along step edges on the Si(lll) surface in the temperature range 450-550 degrees C. In this temperature range, the 7 x 7 reconstruction is not formed in regions where epitaxial layers have grown from step edges, whereas the 7 x 7 reconstruction is preserved on original terraces. Nucleation takes place on the boundaries between the 7 x 7 reconstructed and unreconstructed regions. Nucleation is more conspicuous al [112]-type step edges than at [112]-type step edges.

引用

页码：66 / 74

页数：9

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