MBE growth and device characteristics of InAIN/GaN HFETs

InAlN/GaN heterostructure field-effect transistors (HFETs) were grown on sapphire substrates by plasma-assisted molecular-beam epitaxy. The In mole fraction in InAlN was estimated to be 0.15 from the X-ray diffraction profile. The room-temperature Hall mobility was 654 cm(2) /V(.)s, and the sheet electron density was 2.0 x 10(13) cm(-2). The InAlN/GaN HFET device, which had a source-drain spacing of 3 mu m and a gate length of 1.5 mu m, showed a good DC performance and an excellent pinch-off characteristic. The maximum source-drain current density and extrinsic transconductance were 500 mA/mm and 52 mS/mm, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim