Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition

被引：117

作者：

Kim, KS ^{[1
]}

Saxler, A ^{[1
]}

Kung, P ^{[1
]}

Razeghi, M ^{[1
]}

Lim, KY ^{[1
]}

机构：

[1] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,JEONJU,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.119650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ternary AlInN was grown by metal-organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed. (C) 1997 American Institute of Physics.

引用

页码：800 / 802

页数：3

共 13 条

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