An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity

被引：17

作者：

Cheng, SY ^{[1
]}

机构：

[1] Oriental Inst Technol, Dept Elect Engn, Taipei 22064, Taiwan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 33卷 / 1-2期

关键词：

AlGaAs; InGaP; potential spike; microwave device;

D O I：

10.1016/S0749-6036(03)00014-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on the insertion of a compositionally linear-graded AlGaAs layer between an InGaP emitter and GaAs base (cap) layer, the zero conduction-band discontinuity and completely reduced potential spike at the emitter-base junction could be obtained in a heterojunction bipolar transistor. This device exhibits not only excellent do characteristics but also better rf performances. Consequently, the designed structure provides promise in high-performance microwave device applications. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1 / 7

页数：7

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