Improved breakdown in LP-MOCVD grown n+-GaAs/δ(P+)-GaInP/n-GaAs heterojunction camel-gate FET

Fabrication of n(+)-GaAs/delta(P+)-GaInP/n-GaAs heterojunction camel-gate field-effect transistors by LP-MOCVD is reported. The active channel was tri-step doped to obtain a high-barrier camel diode. A delta(P+)-GaInP layer was employed to offer a high valence band, offset as a hole barrier, as well as an enhanced conduction band, offset for good electron confinement. A camel diode using this material structure shows a barrier height > 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 14O mS/mm with a unity current gain frequency of 17 GHz for a 1 x 50 mu m(2) device.