GAINP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HIGH F(T), F(MAX), AND BREAKDOWN VOLTAGE

被引：41

作者：

SONG, JI

CANEAU, C

CHOUGH, KB

HONG, WP

机构：

[1] Bellcore, Red Bank

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 01期

关键词：

D O I：

10.1109/55.289478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV(CEO) approximately 20 V). Small area, self-aligned emitter transistors with two 2 x 5 mum2 emitter fingers were fabricated and exhibited f(T) and f(max) of 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/CaAs DHBT's for high-power microwave applications.

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页码：10 / 12

页数：3

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