PHOTOLUMINESCENCE CHARACTERIZATION OF NONRADIATIVE RECOMBINATION IN CARBON-DOPED GAAS

被引：16

作者：

CALDERON, L

LU, Y

SHEN, H

PAMULAPATI, J

DUTTA, M

CHANG, WH

YANG, LW

WRIGHT, PD

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,SLCET,ED,FT MONMOUTH,NJ 07703

[2] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoluminescence is used to investigate the basic recombination mechanisms in carbon-doped GaAs samples, with hole concentrations ranging from 3.0 x 10(16) to 1.2 x 10(20) cm-3. The solution of a one-dimensional, steady-state continuity equation for minority carriers indicates that in heavily carbon-doped GaAs, surface recombination is minimal, while bulk nonradiative recombination is dominant. The bulk nonradiative recombination rate depends not only on p2, which represents Auger recombination, but also on p3. By using a single p+-GaAs:C (1 x 10(20) cm-3) base layer in an AlGaAs/GaAs heterojunction bipolar transistor, the surface recombination is minimized.

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页码：1597 / 1599

页数：3

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