ENHANCED HOT-ELECTRON PHOTOLUMINESCENCE FROM HEAVILY CARBON-DOPED GAAS

被引：25

作者：

AITCHISON, BJ ^{[1
]}

HAEGEL, NM ^{[1
]}

ABERNATHY, CR ^{[1
]}

PEARTON, SJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An enhancement of hot-electron photoluminescence due to degenerate conditions in the valence band has been observed in metalorganic molecular beam epitaxial grown GaAs:C with net acceptor concentration of up to 4×10 20 cm-3. The photoluminescence (PL) was studied as a function of free-carrier concentration and sample temperature. Comparison of the PL spectra from the heavily doped GaAs to that of undoped material shows a peak shift to lower energy coupled with a greatly enhanced high-energy tail extending into the visible region of the spectrum. At 300 K, luminescence at 1.8 eV is observed at 20% the intensity of the peak luminescence at 1.36 eV.

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页码：1154 / 1156

页数：3

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