HIGH DOPANT AND CARRIER CONCENTRATION EFFECTS IN GALLIUM-ARSENIDE - BAND-STRUCTURE AND EFFECTIVE INTRINSIC CARRIER CONCENTRATIONS

被引：23

作者：

BENNETT, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2866 / 2874

页数：9

共 32 条

[1] BAND-GAP NARROWING DUE TO MANY-BODY EFFECTS IN SILICON AND GALLIUM-ARSENIDE [J].

ABRAM, RA ;

CHILDS, GN ;

SAUNDERSON, PA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34) :6105-6125

[2] AN OPERATIONAL METHOD TO MODEL CARRIER DEGENERACY AND BAND-GAP NARROWING [J].

ADLER, MS .

SOLID-STATE ELECTRONICS, 1983, 26 (05) :387-396

[3] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASBECK, PM ;

MILLER, DL ;

ASATOURIAN, R ;

KIRKPATRICK, CG .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :403-406

[4] IMPROVED PHYSICS FOR SIMULATING SUB-MICRON BIPOLAR-DEVICES [J].

BENNETT, HS ;

FUOSS, DE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :2069-2075

[5] IMPROVED CONCEPTS FOR PREDICTING THE ELECTRICAL BEHAVIOR OF BIPOLAR STRUCTURES IN SILICON [J].

BENNETT, HS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :920-927

[6] BAND-STRUCTURE AND DENSITY OF STATES CHANGES IN HEAVILY DOPED SILICON [J].

BENNETT, HS .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2837-2844

[7] UPPER LIMITS FOR THE NUMBER OF BOUND-STATES ASSOCIATED WITH THE YUKAWA POTENTIAL [J].

BENNETT, HS .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1981, 86 (05) :503-508

[8] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[9] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[10] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

← 1 2 3 4 →