BAND-STRUCTURE AND DENSITY OF STATES CHANGES IN HEAVILY DOPED SILICON

被引：15

作者：

BENNETT, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2837 / 2844

页数：8

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