AN OPERATIONAL METHOD TO MODEL CARRIER DEGENERACY AND BAND-GAP NARROWING

被引：10

作者：

ADLER, MS

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 05期

关键词：

D O I：

10.1016/0038-1101(83)90094-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：387 / 396

页数：10

共 15 条

[1]

ADLER MS, 1979, TECH DIGEST IEEE IED, P550

[2]

ADLER MS, 1979, P NASECODE I C, P3

[3] AUGER-RECOMBINATION IN SI [J].

BECK, JD ;

CONRADT, R .

SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95

[4] INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR [J].

DEMAN, HJJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :833-+

[5] TRANSPORT-EQUATIONS FOR THE ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR-DEVICES [J].

LUNDSTROM, MS ;

SCHWARTZ, RJ ;

GRAY, JL .

SOLID-STATE ELECTRONICS, 1981, 24 (03) :195-202

[6]

MERTENS RP, 1973, IEEE T ELECTRON DEVI, V20, P290

[7] TRANSPORT EQUATIONS IN HEAVILY DOPED SILICON, AND CURRENT GAIN OF A BIPOLAR TRANSISTOR [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1251-1259

[8] HEAVY DOPING EFFECTS AND INJECTION EFFICIENCY OF SILICON TRANSISTORS [J].

MOCK, MS .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :819-824

[9] ONE-DIMENSIONAL DEVICE MODEL OF THE NPN BIPOLAR-TRANSISTOR INCLUDING HEAVY DOPING EFFECTS UNDER FERMI STATISTICS [J].

NAKAGAWA, A .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :943-949

[10] MEASUREMENT OF HEAVY DOPING PARAMETERS IN SILICON BY ELECTRON-BEAM-INDUCED CURRENT [J].

POSSIN, GE ;

ADLER, MS ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :983-990

← 1 2 →