AN OPERATIONAL METHOD TO MODEL CARRIER DEGENERACY AND BAND-GAP NARROWING

被引:10
作者
ADLER, MS
机构
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D O I
10.1016/0038-1101(83)90094-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:387 / 396
页数:10
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共 15 条
[11]  
POSSIN GE, 1980, TECH DIGEST IEEE IED, P270
[12]   HEAVILY DOPED TRANSPARENT-EMITTER REGIONS IN JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS [J].
SHIBIB, MA ;
LINDHOLM, FA ;
THEREZ, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :959-965
[13]   MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].
SLOTBOOM, JW ;
DEGRAAFF, HC .
SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862
[14]   SEMICONDUCTOR CURRENT-FLOW EQUATIONS (DIFFUSION AND DEGENERACY) [J].
STRATTON, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1288-&
[15]   TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].
VANOVERSTRAETEN, RJ ;
DEMAN, HJ ;
MERTENS, RP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298