MEASUREMENT OF HEAVY DOPING PARAMETERS IN SILICON BY ELECTRON-BEAM-INDUCED CURRENT

被引：52

作者：

POSSIN, GE

ADLER, MS

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19968

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：983 / 990

页数：8

相关论文

共 30 条

[1] NON-DESTRUCTIVE MEASUREMENT OF SURFACE CONCENTRATIONS AND JUNCTION DEPTHS OF DIFFUSED SEMICONDUCTOR LAYERS
ABE, T
NISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (04) : 397 - &
[2] ACCURATE CALCULATIONS OF FORWARD DROP AND POWER DISSIPATION IN THYRISTORS
ADLER, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (01) : 16 - 22
[3] AUGER-RECOMBINATION IN SI
BECK, JD
CONRADT, R
[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95
[4] BISHOP HE, 1965, 4TH INT C XRAY OPT M, P153
[5] SPATIAL DISTRIBUTION OF FLUORESCENT RADIATION EMISSION CAUSED BY AN ELECTRON BEAM
COHN, A
CALEDONIA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) : 3767 - +
[6] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
DZIEWIOR, J
SCHMID, W
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348
[7] EVERHART TE, 1971, J APPL PHYS, V42, P5836
[8] FIEBIGER JR, 1972, J APPL PHYS, V43, P3203
[9] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION
GARDNER, EE
KAPPALLO, W
GORDON, CR
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &
[10] GRUN AE, 1956, Z NATURFORSCHUNG A, V12, P89