ONE-DIMENSIONAL DEVICE MODEL OF THE NPN BIPOLAR-TRANSISTOR INCLUDING HEAVY DOPING EFFECTS UNDER FERMI STATISTICS

被引：24

作者：

NAKAGAWA, A

机构：

[1] Toshiba Research, Development Center, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 11期

关键词：

D O I：

10.1016/0038-1101(79)90067-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier transport equations extended to Fermi statistics will be given with characteristic parameters, including heavy doping effect. These equations will be solved numerically by introducing a new method for calculating the parameters. Calculated results will accurately reproduce the significant decrease in transistor current gain with a high impurity concentration at emitter-base junction. © 1979.

引用

页码：943 / 949

页数：7

共 13 条

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