IMPROVED PHYSICS FOR SIMULATING SUB-MICRON BIPOLAR-DEVICES

[1] ACHIEVING ACCURACY IN TRANSISTOR AND THYRISTOR MODELING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1053 - 1059

[2] VERIFICATION OF MODELS FOR FABRICATION OF ARSENIC SOURCE-DRAINS IN VLSI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1453 - 1462

[3] ALBERS J, COMMUNICATION

[4] COMPARISON OF THEORETICAL AND EMPIRICAL LIFETIMES FOR MINORITY-CARRIERS IN HEAVILY DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1984, 27 (10) : 893 - 897

[5] IMPROVED CONCEPTS FOR PREDICTING THE ELECTRICAL BEHAVIOR OF BIPOLAR STRUCTURES IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 920 - 927

[6] STATISTICAL COMPARISONS OF DATA ON BAND-GAP NARROWING IN HEAVILY DOPED SILICON - ELECTRICAL AND OPTICAL MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3582 - 3587

[7] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[8] BENNETT HS, 1985, SOLID STATE ELECTRON, V28

[9] TWO-DIMENSIONAL ANALYSIS OF SEMICONDUCTOR-DEVICES USING GENERAL-PURPOSE INTERACTIVE PDE SOFTWARE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1056 - 1070

[10] CALLEN HB, 1960, THERMODYNAMICS, P207

[1] ACHIEVING ACCURACY IN TRANSISTOR AND THYRISTOR MODELING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) : 1053 - 1059

[2] VERIFICATION OF MODELS FOR FABRICATION OF ARSENIC SOURCE-DRAINS IN VLSI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1453 - 1462

[3] ALBERS J, COMMUNICATION

[4] COMPARISON OF THEORETICAL AND EMPIRICAL LIFETIMES FOR MINORITY-CARRIERS IN HEAVILY DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1984, 27 (10) : 893 - 897

[5] IMPROVED CONCEPTS FOR PREDICTING THE ELECTRICAL BEHAVIOR OF BIPOLAR STRUCTURES IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 920 - 927

[6] STATISTICAL COMPARISONS OF DATA ON BAND-GAP NARROWING IN HEAVILY DOPED SILICON - ELECTRICAL AND OPTICAL MEASUREMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3582 - 3587

[7] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[8] BENNETT HS, 1985, SOLID STATE ELECTRON, V28

[9] TWO-DIMENSIONAL ANALYSIS OF SEMICONDUCTOR-DEVICES USING GENERAL-PURPOSE INTERACTIVE PDE SOFTWARE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1056 - 1070

[10] CALLEN HB, 1960, THERMODYNAMICS, P207