COMPARISON OF THEORETICAL AND EMPIRICAL LIFETIMES FOR MINORITY-CARRIERS IN HEAVILY DOPED SILICON

被引：8

作者：

BENNETT, HS

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 10期

关键词：

D O I：

10.1016/0038-1101(84)90008-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：893 / 897

页数：5

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