INGAP/GAAS/INGAP DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE GROWN BY CBE

被引：28

作者：

CHEN, YK

RAPRE, R

TSANG, WT

WU, MC

机构：

[1] A&T Bell Laboratories, New Jersey 07974

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19920775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon-doped InGaP/GaAs/InGaP double heterostructure bipolar transistors with 25 angstrom setback layer are grown by chemical beam epitaxy. Transistors with nonalloyed base contacts show a very high common emitter current gain of 120 and very low collector saturation voltage of 75 m V at room temperature.

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收藏

页码：1228 / 1230

页数：3

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