CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS

被引：47

作者：

LEE, TW

HOUSTON, PA

KUMAR, R

YANG, XF

HILL, G

HOPKINSON, M

CLAXTON, PA

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both current-voltage and photoemission measurements of the conduction-band discontinuity of the same InGaP/GaAs p-n heterojunction have been carried out. Interpretation of the current-voltage results using thermionic emission theory applied to a heterojunction bipolar transistor have resulted in a conduction-band offset value of 0.21 eV in the case of a compositionally abrupt junction. This figure has been confirmed by performing independent photoemission measurements on the same junction.

引用

页码：474 / 476

页数：3

共 11 条

[1] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BISWAS, D
DEBBAR, N
BHATTACHARYA, P
RAZEGHI, M
DEFOUR, M
OMNES, F
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (09) : 833 - 835
[2] BAND OFFSET OF GAAS/IN0.48GA0.52P MEASURED UNDER HYDROSTATIC-PRESSURE
CHEN, JH
SITES, JR
SPAIN, IL
HAFICH, MJ
ROBINSON, GY
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (07) : 744 - 746
[3] HAASE HA, 1991, APPL PHYS LETT, V58, P616
[4] BAND DISCONTINUITIES IN GAAS/ALXGA1-XAS HETEROJUNCTION PHOTODIODES
HAASE, MA
EMANUEL, MA
SMITH, SC
COLEMAN, JJ
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 404 - 406
[5] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KOBAYASHI, T
TAIRA, K
NAKAMURA, F
KAWAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4898 - 4902
[6] LEE TSH, UNPUB
[7] METAL ORGANIC MOLECULAR-BEAM EPITAXY OF GAAS AND GA0.5IN0.5P
MAUREL, P
BOVE, P
GARCIA, JC
GRATTEPAIN, C
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (04) : 254 - 260
[8] PANKOVE JI, 1971, OPTICAL PROCESSES SE, P287
[9] DETERMINATION OF VALENCE AND CONDUCTION-BAND DISCONTINUITIES AT THE (GA,IN) P/GAAS HETEROJUNCTION BY C-V PROFILING
RAO, MA
CAINE, EJ
KROEMER, H
LONG, SI
BABIC, DI
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 643 - 649
[10] OPEN-TUBE DIFFUSION TECHNIQUES FOR INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
SCHUITEMAKER, P
HOUSTON, PA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (06) : 383 - 387

← 1 2 →