CHARACTERIZATION OF GALNP/GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS

被引：25

作者：

SONG, JI

CANEAU, C

HONG, WP

CHOUGH, KB

机构：

[1] Bellcore, Red Bank, NJ 07701

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

D O I：

10.1049/el:19931252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heteojunction bipolar transistor with the same collector doping and thickness.

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页码：1881 / 1883

页数：3

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