SMALL AREA INGAP EMITTER CARBON DOPED GAAS BASE HBTS GROWN BY MOMBE

被引：23

作者：

REN, F

ABERNATHY, CR

PEARTON, SJ

LOTHIAN, JR

CHU, SNG

WISK, PW

FULLOWAN, TR

TSENG, B

CHEN, YK

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

TRANSISTORS; BIPOLAR DEVICES;

D O I：

10.1049/el:19921447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance selfaligned InGaP/GaAs HBTs are reported. SIMS and TEM analysis indicate the presence of clean and abrupt InGaP/GaAs interfaces which are reflected in excellent DC performance. Using a base layer with a sheet resistance of 135 OMEGA/square, a DC current gain of 25 was obtained for 2 x 5 mum2 devices. Both cutoff frequency f(t) and maximum frequency of oscillation f(max) are measured above 70 GHz. These are the highest values yet reported for HBTs containing InGaP.

引用

页码：2250 / 2252

页数：3

共 10 条

[1]

ABERNATHY CR, IN PRESS J APPL PHYS

[2] HEAVILY DOPED BASE GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY [J].