Synthesis of Nitrogen-Doped Graphene Using Embedded Carbon and Nitrogen Sources

被引：736

作者：

Zhang, Chaohua ^{[1
]}

Fu, Lei ^{[1
]}

Liu, Nan ^{[1
]}

Liu, Minhao ^{[2
]}

Wang, Yayu ^{[2
]}

Liu, Zhongfan ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn,Acad Adv Interdisciplinary S, Beijing 100871, Peoples R China

[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 08期

关键词：

COKING RESISTANCE; BORON; GRAPHITE; NITRIDE;

D O I：

10.1002/adma.201004110

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A facile strategy to grow nitrogen-doped graphene using embedded nitrogen and carbon in metal substrate via a segregation method is reported. As doping is concurrently carried out in the segregation process of the carbon species, N atoms can be substitutionally doped into the graphene lattice. This approach allows precise control of the doping degree and location, which enables growing various heterojunctions at the desired location. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1020 / 1024

页数：5

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