Polymer-based organic field-effect transistor using offset printed source/drain structures -: art. no. 123508

被引：104

作者：

Zielke, D

Hübler, AC

Hahn, U

Brandt, N

Bartzsch, M

Fügmann, U

Fischer, T

Veres, J

Ogier, S

机构：

[1] TU Chemnitz, Inst Print & Media Technol, D-09107 Chemnitz, Germany

[2] Merck Chem Ltd, LC Manchester Tech Ctr, Manchester M9 8ZS, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 12期

关键词：

D O I：

10.1063/1.2056579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4-ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of 3x10(-3) cm(2) V-1 s(-1) and on/off ratio of about 10(3) was achieved, making it possible to produce digital logic elements. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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