Self-assembled metallic dots and antidots: Epitaxial Co on Ru(0001)

被引：26

作者：

Yu, CT ^{[1
]}

Li, DQ ^{[1
]}

Pearson, J ^{[1
]}

Bader, SD ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1351522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown similar to1-420 nm thick epitaxial Co wedges on Ru(0001) with molecular-beam epitaxy at 350 degreesC and characterized them with atomic force microscopy. A metal-on-metal growth mode was observed where three-dimensional islands (dots) or a flat film network with holes (antidots) in truncated pyramidal shapes exist below or above similar to 20 nm, respectively. The top of the islands and the rim of the holes are flat with a roughness of similar to0.3 nm, and the lateral sizes of these dots/antidots, similar to 10(2) nm, tend to be uniform. We suggest that this self-assembled growth be mainly driven by strain. (C) 2001 American Institute of Physics.

引用

收藏

页码：1228 / 1230

页数：3

相关论文

共 24 条

[1] STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].

BAUER, E ;

VANDERMERWE, JH .

PHYSICAL REVIEW B, 1986, 33 (06) :3657-3671

[2] EFFECT OF STRAIN ON SURFACE-DIFFUSION AND NUCLEATION [J].

BRUNE, H ;

BROMANN, K ;

RODER, H ;

KERN, K ;

JACOBSEN, J ;

STOLTZE, P ;

JACOBSEN, K ;

NORSKOV, J .

PHYSICAL REVIEW B, 1995, 52 (20) :14380-14383

[3]

CHAKRAVE.BK, 1967, J PHYS CHEM SOLIDS, V28, P2401, DOI 10.1016/0022-3697(67)90026-1

[4] CUSPIDAL PIT FORMATION DURING THE GROWTH OF SIXGE1-X STRAINED FILMS [J].

CHEN, KM ;

JESSON, DE ;

PENNYCOOK, SJ ;

THUNDAT, T ;

WARMACK, RJ .

APPLIED PHYSICS LETTERS, 1995, 66 (01) :34-36

[5] Critical nuclei shapes in the stress-driven 2D-to-3D transition [J].

Chen, KM ;

Jesson, DE ;

Pennycook, SJ ;

Thundat, T ;

Warmack, RJ .

PHYSICAL REVIEW B, 1997, 56 (04) :R1700-R1703

[6] Structural transition in large-lattice-mismatch heteroepitaxy [J].

Chen, Y ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4046-4049

[7] Dynamic self-organization of strained islands during SiGe epitaxial growth [J].

Floro, JA ;

Chason, E ;

Sinclair, MB ;

Freund, LB ;

Lucadamo, GA .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :951-953

[8] Novel growth of Ag islands on Si(III): Plateaus with a singular height [J].

Gavioli, L ;

Kimberlin, KR ;

Tringides, MC ;

Wendelken, JF ;

Zhang, ZY .

PHYSICAL REVIEW LETTERS, 1999, 82 (01) :129-132

[9] Competing growth mechanisms of Ge/Si(001) coherent clusters [J].

Goldfarb, I ;

Hayden, PT ;

Owen, JHG ;

Briggs, GAD .

PHYSICAL REVIEW B, 1997, 56 (16) :10459-10468

[10] Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy [J].

Goldfarb, I ;

Hayden, PT ;

Owen, JHG ;

Briggs, GAD .

PHYSICAL REVIEW LETTERS, 1997, 78 (20) :3959-3962