Dynamic self-organization of strained islands during SiGe epitaxial growth

被引：48

作者：

Floro, JA

Chason, E

Sinclair, MB

Freund, LB

Lucadamo, GA

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

[3] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.122049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dynamic self-organization of coherently strained islands during SiGe molecular beam epitaxy on Si(001) is measured in real time using a novel spectroscopic light scattering technique. We show that an array of hut clusters self-orders on a square mesh with increasing areal coverage. Ordering occurs to minimize the repulsive elastic interactions between neighboring islands. Self-organization breaks down when islands coalesce during deposition or during static coarsening. (C) 1998 American Institute of Physics.

引用

收藏

页码：951 / 953

页数：3

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