Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

被引:50
作者
Lee, J
Gao, W
Li, Z
Hodgson, M
Metson, J
Gong, H
Pal, U
机构
[1] Univ Auckland, Dept Chem, Auckland, New Zealand
[2] Univ Auckland, Dept Mech Engn, Auckland, New Zealand
[3] Univ Auckland, Dept Chem & Mat Engn, Auckland, New Zealand
[4] Natl Univ Singapore, Dept Mat Sci, Singapore 117548, Singapore
[5] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 08期
关键词
D O I
10.1007/s00339-004-3197-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made.
引用
收藏
页码:1641 / 1646
页数:6
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