Hard hydrogenated carbon films with low stress

被引：100

作者：

Lacerda, RG ^{[1
]}

Marques, FC ^{[1
]}

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Analysis of hard a-C:H films with low stress prepared by methane plasma decomposition is reported. Films with hardness as high as 14 GPa and stress as low as 0.5 GPa were obtained. These films have a high Raman I-d/I-g ratio (similar to 1.0), and small Tauc's band gap (similar to 0.4 eV). This letter also supplies strong evidence that the subimplantation deposition model, used to explain the formation of la-C and ta-C:H films, is also valid for a-C:H films deposited by methane plasma decomposition. It is proposed that the rigidity of the films is basically provided by a matrix of dispersed cross-linked sp(2) sites, in addition to the contribution of the sp(3) sites. (C) 1998 American Institute of Physics.

引用

页码：617 / 619

页数：3

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