Highly tetrahedral amorphous carbon films with low stress

被引：110

作者：

Chhowalla, M

Yin, Y

Amaratunga, GAJ

McKenzie, DR

Frauenheim, T

机构：

[1] Department of Electrical Engineering, University of Liverpool, Liverpool L69

[2] University of Sydney, Dept. of Appl. Physics

[3] Theoretische Physik III, Institut für Physik, Technische Universität

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum are. The sp(3) fraction, hardness, and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2%, and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp(3) approximate to 80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained, The B in the films was found to be predominantly (approximate to 75%) sp(2) bonded, Additionally, the stress in the films did not vary with the ion energy or sp(3) fraction unlike in regular ta-C films. (C) 1996 American Institute of Physics.

引用

页码：2344 / 2346

页数：3

共 20 条

[1]

Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173

[2] INTRINSIC TOUGHNESS OF INTERFACES [J].