Tensile stress in hard metal films

被引:56
作者
Janssen, GCAM
Dammers, AJ
Sivel, VGM
Wang, WR
机构
[1] Delft Univ Technol, Dept Mat Sci & Technol, NL-2628 AL Delft, Netherlands
[2] NIMR, NL-2628 AL Delft, Netherlands
关键词
D O I
10.1063/1.1619561
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films on substrates are usually in a stressed state. An important, but trivial, contribution to that stress stems from the difference in thermal expansion coefficient of substrate and film. Much more interesting are the intrinsic stresses, resulting from the growth and/or microstructure of the film. Intrinsic compressive stress was explained by d'Heurle in 1970. Intrinsic tensile stress for recrystallizing metal films was treated succesfully by Doljack and Hoffman in 1972. In the present letter we explain the occurrence of tensile stress in nonrecrystallizing metal films. The explanation is based on modern grain growth models and accurate stress measurements. The key ingredient to the explanation is the proof of the existence of a stress gradient in nonrecrystallizing metal films. (C) 2003 American Institute of Physics.
引用
收藏
页码:3287 / 3289
页数:3
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