V-shaped defects connected to inversion domains in AlGaN layers

被引：53

作者：

Pécz, B

Makkai, Z

di Forte-Poisson, MA

Huet, F

Dunin-Borkowski, RE

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[2] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.1355996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy has been used to show that V-shaped surface pits on these samples differ from similar features observed in the InGaN system. Inversion domains and segregated Al are found in the middle of each V pit, and superlattice layers are observed to follow the pit sidewalls. (C) 2001 American Institute of Physics.

引用

页码：1529 / 1531

页数：3

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