Growth of GaN by atomic hydrogen-assisted molecular beam epitaxy

被引：8

作者：

Okamoto, Y ^{[1
]}

Hashiguchi, S ^{[1
]}

Okada, Y ^{[1
]}

Kawabe, M ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Sci Mat, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 10A期

关键词：

GaN; MBE; atomic hydrogen; III-V nitride;

D O I：

10.1143/JJAP.37.L1109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effects of atomic hydrogen(H) generated by a hot tungsten (W) cracking cell upon substrate cleaning and GaN growth by RF-MBE. And we have shown atomic Fl irradiation during thermal cleaning stage produce a smooth surface, which in turn improves that quality of GaN films. Also confirmed is that atomic H irradiation during GaN growth is efficient to improve the crystal quality. Compared to the PL data of as-grown samples, the annealed samples didn't show degradation of optical quality. From these, it can be considered that the possibility of hydrogen passivation is small. We consider that atomic H irradiation in N-rich GaN growth suppresses 3-D growth and enhances 2-D growth, though the atomic-scale mechanisms and interaction of atomic H irradiation on GaN growth is not totally clear at present.

引用

页码：L1109 / L1112

页数：4

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