LOW-TEMPERATURE SURFACE CLEANING OF INP BY IRRADIATION OF ATOMIC-HYDROGEN

被引：53

作者：

CHUN, YJ

SUGAYA, T

OKADA, Y

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

SEMICONDUCTOR SURFACE CLEANING; INP; INAS; ATOMIC HYDROGEN; RHEED; AES MOLECULAR-BEAM EPITAXY (MBE);

D O I：

10.1143/JJAP.32.L287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of atomic hydrogen irradiation on the surface cleaning of InP substrates have been investigated by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Carbon and oxygen-free clean surfaces of InP have been produced for a temperature range of as low as about 350-degrees-C for 30 min irradiation of atomic hydrogen. Under this condition, the RHEED patterns have revealed phosphorus-stabilized (2 x 4) reconstructed surfaces while indium-stabilized (4 x 2) reconstruction patterns have been observed upon cleaning by using the conventional arsenic irradiation at 530-degrees-C.

引用

页码：L287 / L289

页数：3

共 13 条

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