Efficient luminescence from porous silicon

被引：13

作者：

Daami, A

Bremond, G

Stalmans, L

Poortmans, J

机构：

[1] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, F-69621 Villeurbanne, France

[2] Interuniv Micro Elect Ctr VZW, B-3001 Louvain, Belgium

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

porous silicon; photoluminescence; passivation;

D O I：

10.1016/S0022-2313(98)00090-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photoluminescence measurements are carried out on porous silicon layers. We show the enhancement and stabilization of the luminescence when depositing a silicon nitride layer on top of porous layers. We also demonstrate that direct-and remote-plasma nitridation are good ways to reduce the ageing effect of porous silicon layers due to a passivation of dangling bonds. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 172

页数：4

共 15 条

[1]

BEAUCARNE G, 1997, P 14 EPVSEC BARC SPA

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].