Nanoscale resistive switching and filamentary conduction in NiO thin films

被引：37

作者：

Ye, J. Y. ^{[1
]}

Li, Y. Q. ^{[1
]}

Gao, J. ^{[1
]}

Peng, H. Y. ^{[1
]}

Wu, S. X. ^{[1
]}

Wu, T. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期

基金：

新加坡国家研究基金会;

关键词：

NANOSPHERE LITHOGRAPHY; OXIDE-FILMS; RESISTANCE;

D O I：

10.1063/1.3494267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10(-9) W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3494267]

引用

页数：3

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