All-Solution-Processed, High-Performance n-Channel Organic Transistors and Circuits: Toward Low-Cost Ambient Electronics

被引：167

作者：

Zhao, Yan ^{[1
]}

Di, Chong-an ^{[1
]}

Gao, Xike ^{[2
]}

Hu, Yunbin ^{[2
]}

Guo, Yunlong ^{[1
]}

Zhang, Lei ^{[1
]}

Liu, Yunqi ^{[1
]}

Wang, Jizheng ^{[1
]}

Hu, Wenping ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Organ Chem, Mat Sci Lab, Shanghai 200032, Peoples R China

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 21期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; SEMICONDUCTING POLYMERS; MOBILITY; CORE; TEMPERATURE; DERIVATIVES; DIIMIDES; SENSORS;

D O I：

10.1002/adma.201004588

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm(2) V-1 s(-1) are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air.

引用

收藏

页码：2448 / +

页数：7

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