Characterization of a soluble anthradithiophene derivative

被引：16

作者：

Conrad, B. R. ^{[1
]}

Chan, C. K. ^{[1
]}

Loth, M. A. ^{[2
]}

Parkin, S. R. ^{[2
]}

Zhang, X. ^{[1
]}

DeLongchamp, D. M. ^{[1
]}

Anthony, J. E. ^{[2
]}

Gundlach, D. J. ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期

关键词：

FIELD-EFFECT TRANSISTORS; 1/F NOISE; CRYSTALLIZATION; MOBILITY;

D O I：

10.1063/1.3495998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate pi/4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility mu(S) of 0.07 cm(2)/V s, current on-off ratio >10(7), and subthreshold swing S approximate to 1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3495998]

引用

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