On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET's

被引：70

作者：

Masson, P ^{[1
]}

Autran, JL

Brini, J

机构：

[1] Lab Phys Composants Semiconducteurs, F-38016 Grenoble 01, France

[2] Inst Natl Sci Appl, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 02期

关键词：

charge pumping current; MOS devices; thin gate oxide;

D O I：

10.1109/55.740662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin (<2 nm) gate oxide thickness, The method is presented here for a two-level charge pumping signal and can be used to significantly increase the accuracy of the technique to extract interface trap parameters in tunnel MOS devices.

引用

页码：92 / 94

页数：3

共 3 条

[1] Use of the charge pumping technique with a sinusoidal gate waveform [J].

Autran, JL ;

Chabrerie, C .

SOLID-STATE ELECTRONICS, 1996, 39 (09) :1394-1395

[2] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[3] ON THE GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN MOSFET [J].

VANDENBOSCH, G ;

GROESENEKEN, G ;

MAES, HE .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (03) :107-109

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