ON THE GEOMETRIC COMPONENT OF CHARGE-PUMPING CURRENT IN MOSFET

被引：64

作者：

VANDENBOSCH, G

GROESENEKEN, G

MAES, HE

机构：

[1] IMEC

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

10.1109/55.215126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a simple method to unambigiously determine the presence of any geometric component in a charge-pumping measurement, by collecting this component at another node via a nearby junction. With this method it has been possible to study the dependence of geometric component on device dimensions and experimental conditions with unprecedented sensitivity. By effectively separating the two current contributions, this method can at the same time also be used to reduce geometric components in the regular charge-pumping signal, hereby increasing the accuracy of the various implementations of the charge pumping (CP) technique.

引用

页码：107 / 109

页数：3

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