Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

被引：59

作者：

Kim, Kwang-Choong

Schmidt, Mathew C. ^{[1
]}

Sato, Hitoshi

Wu, Feng

Fellows, Natalie

Jia, Zhongyuan

Saito, Makoto

Nakamura, Shuji

DenBaars, Steven P.

Speck, James S.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, UCSB Grp, ERATO JST, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2805029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar m-plane (1 (1) over bar 00) InGaN-based light emitting diodes (LEDs) grown on low-extended defect density bulk m-plane GaN substrates offer great potential for high performance devices due to the absence of polarization-related internal electric fields. To optimize the quantum well (QW) structure, systematic sets of near blue-ultraviolet LEDs using different well widths, barrier widths, and QW periods were packaged and tested. With increasing current, high power LEDs were realized with fairly flat external quantum efficiency and blueshift-free peak wavelength for QWs with thicknesses from 8 to 20 nm, barrier widths from 10 to 22 nm, and QW numbers from 4 to 10. (C) 2007 American Institute of Physics.

引用

页数：3

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