Dislocation-free m-plane InGaN/GaN light-emitting diodes on m-plane GaN single crystals

被引：123

作者：

Okamoto, Kuniyoshi ^{[1
]}

Ohta, Hiroaki ^{[1
]}

Nakagawa, Daisuke ^{[1
]}

Sonobe, Masayuki ^{[1
]}

Ichihara, Jun ^{[1
]}

Takasu, Hidemi ^{[1
]}

机构：

[1] ROHM Co Ltd, Res & Dev Headquarters, Kyoto 6158585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 42-45期

关键词：

nonpolar; m-plane; InGaN; light-emitting diode; GaN bulk substrate; polarized light;

D O I：

10.1143/JJAP.45.L1197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

m-Plane (1010) nonpolar InGaN-based light emitting diodes (LEDs) with no threading dislocations or stacking faults have been realized on in-plane GaN single crystals by conventional metal organic vapor phase epitaxy. The crystalline properties of the material, together with the structures of the LED devices, have been observed by scanning transmission electron microscopy. It is shown that dislocation-free nonpolar nitride layers with smooth surfaces can be obtained under growth conditions involving high V/III ratios, which are the optimized growth conditions for c-plane GaN. The peak wavelength of the electroluminescence emission obtained from the finished devices is 435 nm, which is in the blue region. The output power and the calculated external quantum efficiency are 1.79 mW and 3.1%, respectively, at a driving current of 20 mA.

引用

页码：L1197 / L1199

页数：3

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