Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation

被引：64

作者：

Chakraborty, A ^{[1
]}

Haskell, BA

Masui, H

Keller, S

Speck, JS

DenBaars, SP

Nakamura, S

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, JST, ERATO, NICP,UCSB Grp, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 2A期

关键词：

nonpolar; m-plane; light-emitting diode; lamp; free standing; pulsed power;

D O I：

10.1143/JJAP.45.739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the DC and pulsed performance of nonpolar in-plane InGaN/GaN multiple-quantum-well light-emitting diode (LED) lamps. LED structures were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition. LEDs with an area of 300 x 300 mu m(2) were packaged into conventional epoxy-encapsulated lamps. The emission wavelength of the LEDs was 452 nm. A CW output power as high as 0.6 mW was achieved at a drive current of 20 mA, corresponding to an external quantum efficiency of 1.09%. Pulsed power measurement on the lamps yielded an output power of 23.5 mW at a drive current of 1A for a duty cycle of 0.25%.

引用

页码：739 / 741

页数：3

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