Perpendicular growth of catalyst-free germanium nanowire arrays

被引：34

作者：

Barrett, Christopher A. ^{[1
,2
]}

Geaney, Hugh ^{[1
,2
]}

Gunning, Robert D. ^{[3
]}

Laffir, Fathima R. ^{[1
,2
]}

Ryan, Kevin M. ^{[1
,2
]}

机构：

[1] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland

[2] Univ Limerick, Dept Chem & Environm Sci, Limerick, Ireland

[3] Univ Oxford, Dept Phys, Oxford OX1 2JD, England

来源：

CHEMICAL COMMUNICATIONS | 2011年 / 47卷 / 13期

关键词：

SOLID SYNTHESIS; GE NANOWIRES; SILICON; ORIENTATION; SI;

D O I：

10.1039/c0cc05202g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High yields of single-crystalline Ge nanowires (NWs) were synthesised in the vapour phase of a high boiling point organic solvent without the need for metal catalyst particles. High density, perpendicular arrays of Ge NWs were subsequently grown from ITO coated substrates. The approach represents a convenient route toward orientated arrays of catalyst-free Ge NWs.

引用

页码：3843 / 3845

页数：3

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