PZT thin film bi-layer devices for phase controlled actuation in MEMS

被引:19
作者
Jenkins, DFL
Clegg, WW
Cattan, E
Remiens, D
机构
[1] Univ Plymouth, Ctr Res Informat Storage Technol, Plymouth PL4 8AA, Devon, England
[2] Univ Valenciennes, LAMAC, F-59600 Maubeuge, France
关键词
MEMS; piezoelectric thin films; actuators;
D O I
10.1023/A:1012256108078
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A potential application for ferroelectric thin films is micro positioning and actuation. For using PZT films as micro-actuators it is desirable to have film thicknesses of comparable size to the underlying structure. The amount of actuation possible is determined by a number of factors: the piezoelectric coefficient d(3)1, geometric factors and the compliance of both the actuator and cantilever and the electric field across the film. Using a bi-layer should therefore increase the amount of actuation for a given drive voltage. Bi-layer devices can also be driven at constant voltage, and their actuation varied by the phase difference of the drive voltage between the two layers. PZT films of thickness 0.5 mum have been deposited as a bi-layer. Micro-actuators have been fabricated using these structures, their electric properties measured and their electro-mechanical properties characterised and evaluated using optical beam deflection.
引用
收藏
页码:5 / 11
页数:7
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