Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

被引：46

作者：

Kimura, A ^{[1
]}

Paulson, CA

Tang, HF

Kuech, TF

机构：

[1] Univ Wisconsin, Dept Biol & Chem Engn, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.1652232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN1-yAsy epitaxial alloy samples with [N]much greater than[As] were grown by metalorganic vapor phase epitaxy. The range of As content achieved, up to y=0.067, greatly extends the range of achievable As levels to values that are well within the miscibility gap of the GaN-GaAs system. The single-phase epitaxial nature of the alloy samples was confirmed by x-ray diffraction. The As-content dependence of the band gap was determined by optical absorption measurements. A highly-bowed bandgap was observed as a function of the As content, and a refined value of the bowing parameter of 16.9+/-1.1 eV was determined. (C) 2004 American Institute of Physics.

引用

页码：1489 / 1491

页数：3

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