Phosphorous and boron doping of nc-Si:H thin films deposited on plastic substrates at 150 °C by Hot-Wire Chemical Vapor Deposition

被引：25

作者：

Filonovich, S. A. ^{[1
]}

Ribeiro, M. ^{[1
]}

Rolo, A. G. ^{[1
]}

Alpuim, P. ^{[1
]}

机构：

[1] Univ Minho, Dept Phys, P-4800058 Guimaraes, Portugal

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

关键词：

hot-wire CVD; nc-Si : H; phosphine; diborane; doping; plastics; low-temperature deposition;

D O I：

10.1016/j.tsf.2007.06.176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 degrees C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (sigma(d)=2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below similar to 50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：576 / 579

页数：4

共 12 条

[1] Optimisation of superstrate solar cells entirely prepared by HWCVD at low substrate temperature [J].

Grunsky, D ;

Kupich, M ;

Schröder, B .

THIN SOLID FILMS, 2006, 501 (1-2) :280-283

[2] Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance [J].

Klein, S ;

Finger, F ;

Carius, R ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (02)

[3] Microcrystalline silicon -: Relation of transport properties and microstructure [J].

Kocka, J ;

Fejfar, A ;

Vorlícek, V ;

Stuchlíková, H ;

Stuchlík, J .

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 :483-494

[4] Characterization of mixed phase silicon by Raman spectroscopy [J].

Ledinsky, M. ;

Fekete, L. ;

Stuchlik, J. ;

Mates, T. ;

Fejfar, A. ;

Kocka, J. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1209-1212

[5] Preferential coalescence of nanocrystalline silicon on different film substrates [J].

Lin, CY ;

Fang, YK ;

Chen, SF ;

Lin, CS ;

Chou, TH ;

Hwang, SB ;

Hwang, JS ;

Lin, KI .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (01) :44-50

[6] Growth of device quality p-type μc-Si:H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells [J].

Mukherjee, C ;

Weber, U ;

Seitz, H ;

Schröder, B .

THIN SOLID FILMS, 2001, 395 (1-2) :310-314

[7]

Pernet P, 1997, P 14 EUR PHOT SOL EN, P2339

[8] Status report: solar cell related research and development using amorphous and microcrystalline silicon deposited by HW(Cat)CVD [J].

Schroeder, B .

THIN SOLID FILMS, 2003, 430 (1-2) :1-6

[9] Evolution of the microstructure in microcrystalline silicon prepared by very high frequency glow-discharge using hydrogen dilution [J].

Vallat-Sauvain, E ;

Kroll, U ;

Meier, J ;

Shah, A ;

Pohl, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3137-3142

[10] Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD [J].

Voz, C ;

Peiró, D ;

Bertomeu, J ;

Soler, D ;

Fonrodona, M ;

Andreu, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :278-283

← 1 2 →