Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

被引：10

作者：

Ivanov, SV ^{[1
]}

Toropov, AA

Sorokin, SV

Shubina, TV

Il'inskaya, ND

Lebedev, AV

Sedova, IV

Kop'ev, PS

Alferov, ZI

Lugauer, HJ

Reuscher, G

Keim, M

Fischer, F

Waag, A

Landwehr, G

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97070 Wurzburg, Germany

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 10期

关键词：

D O I：

10.1134/1.1187546

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described. (C) 1998 American Institute of Physics. [S1063-7826(98)02810-5].

引用

页码：1137 / 1140

页数：4

共 16 条

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