Low temperature phases of Pb/Si(111)

被引：39

作者：

Custance, O

Gómez-Rodríguez, JM

Baró, AM

Juré, L

Mallet, P

Veuillen, JY

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain

[2] CNRS, Lab Etud Proprietes Elect Solides, F-38042 Grenoble 9, France

来源：

SURFACE SCIENCE | 2001年 / 482卷

关键词：

scanning tunneling microscopy; epitaxy; growth; surface structure; morphology; roughness; and topography; silicon; lead;

D O I：

10.1016/S0039-6028(01)00774-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work the low temperature phases of Pb/Si(111) have been investigated by means of variable temperature scanning tunneling microscopy (STM). Our STM measurements, performed in the range of 55-215 K, show that two different phases, i.e. Pb/Si(111)-(3 x 3) and Pb/Si(111)-((3)(2)(-1 1)), coexist for samples with a nominal Pb coverage below 1 ML. The general morphology as well as the atomic structure of both surface reconstructions are discussed and compared to previous results. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1399 / 1405

页数：7

共 24 条

[1] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III)
Avila, J
Mascaraque, A
Michel, EG
Asensio, MC
LeLay, G
Ortega, J
Pérez, R
Flores, F
[J]. PHYSICAL REVIEW LETTERS, 1999, 82 (02) : 442 - 445
[2] PHOTOEMISSION-STUDY OF THE GROWTH, DESORPTION, SCHOTTKY-BARRIER FORMATION, AND ATOMIC-STRUCTURE OF PB ON SI(111)
CARLISLE, JA
MILLER, T
CHIANG, TC
[J]. PHYSICAL REVIEW B, 1992, 45 (07): : 3400 - 3409
[3] Surface charge ordering transition: alpha phase of Sn/Ge(111)
Carpinelli, JM
Weitering, HH
Bartkowiak, M
Stumpf, R
Plummer, EW
[J]. PHYSICAL REVIEW LETTERS, 1997, 79 (15) : 2859 - 2862
[4] Direct observation of a surface charge density wave
Carpinelli, JM
Weitering, HH
Plummer, EW
Stumpf, R
[J]. NATURE, 1996, 381 (6581) : 398 - 400
[5] CUSTANCE O, IN PRESS
[6] The mechanism for the 3 x 3 distortion of Sn/Ge(111)
de Gironcoli, S
Scandolo, S
Ballabio, G
Santoro, G
Tosatti, E
[J]. SURFACE SCIENCE, 2000, 454 (01) : 172 - 177
[7] STUDIES OF MONOLAYERS OF LEAD AND TIN ON SI(111) SURFACES
ESTRUP, PJ
MORRISON, J
[J]. SURFACE SCIENCE, 1964, 2 : 465 - 472
[8] SUBMONOLAYER PHASES OF PB ON SI(111)
GANZ, E
XIONG, FL
HWANG, IS
GOLOVCHENKO, J
[J]. PHYSICAL REVIEW B, 1991, 43 (09): : 7316 - 7319
[9] GROWTH AND MORPHOLOGY OF PB ON SI(111)
GANZ, E
HWANG, IS
XIONG, FL
THEISS, SK
GOLOVCHENKO, J
[J]. SURFACE SCIENCE, 1991, 257 (1-3) : 259 - 273
[10] Real-time observation of the dynamics of single Pb atoms on Si(111)-(7x7) by scanning tunneling microscopy
Gomezrodriguez, JM
Saenz, JJ
Baro, AM
Veuillen, JY
Cinti, RC
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (05) : 799 - 802

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