Fabrication of highly ordered InSb nanowire arrays by electrodeposition in porous anodic alumina membranes

被引：72

作者：

Zhang, XR ^{[1
]}

Hao, YF ^{[1
]}

Meng, GW ^{[1
]}

Zhang, LD ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 10期

关键词：

D O I：

10.1149/1.2007187

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Highly ordered near-stoichiometrical polycrystalline InSb nanowire arrays have been fabricated by direct current (dc) electrodeposition inside the nanochannels of anodic alumina membranes (AAMs) and subsequent annealing. X-ray diffraction patterns and X-ray energy dispersion analysis reveal the change of crystal structure and the ratio of indium to antimony due to the deposition potential. The results show that cubic-phase InSb nanowire arrays can be achieved by using certain deposition potential and subsequent annealing. Transmission electron microscopy and scanning electron microscopy results demonstrate that these InSb nanowires are uniform with diameters about 50 nm, corresponding to the pore diameter of the AAMs. Raman spectrum further demonstrates the InSb nanowire with high crystal quality. (c) 2005 The Electrochemical Society.

引用

页码：C664 / C668

页数：5