Suppression of Inhomogeneous Segregation in Graphene Growth on Epitaxial Metal Films

被引：45

作者：

Yoshii, Shigeo ^{[1
]}

Nozawa, Katsuya ^{[1
]}

Toyoda, Kenji ^{[1
]}

Matsukawa, Nozomu ^{[1
]}

Odagawa, Akihiro ^{[1
]}

Tsujimura, Ayumu ^{[1
]}

机构：

[1] Panasonic Corp, Adv Technol Res Labs, Kyoto 6190237, Japan

来源：

NANO LETTERS | 2011年 / 11卷 / 07期

关键词：

Graphene; epitaxy; chemical vapor deposition; ruthenium; nickel; cobalt; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; LAYER GRAPHENE; CARBON; RUTHENIUM; COPPER; NICKEL;

D O I：

10.1021/nl200604g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large-scale uniform graphene growth was achieved by suppressing inhomogeneous carbon segregation using a single domain Ru film epitaxially grown on a sapphire substrate. An investigation of how the metal thickness affected growth and a comparative study on metals with different crystal structures have revealed that locally enhanced carbon segregation at stacking domain boundaries of metal is the origin of inhomogeneous graphene growth. Single domain Ru film has no stacking domain boundary, and the graphene growth on it is mainly caused not by segregation but by a surface catalytic reaction. Suppression of local segregation is essential for uniform graphene growth on epitaxial metal films.

引用

页码：2628 / 2633

页数：6

共 28 条

[1] Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire [J].

Ago, Hiroki ;

Ito, Yoshito ;

Mizuta, Noriaki ;

Yoshida, Kazuma ;

Hu, Baoshan ;

Orofeo, Carlo M. ;

Tsuji, Masaharu ;

Ikeda, Ken-ichi ;

Mizuno, Seigi .

ACS NANO, 2010, 4 (12) :7407-7414

[2] Patterned Growth of Graphene over Epitaxial Catalyst [J].

Ago, Hiroki ;

Tanaka, Izumi ;

Orofeo, Carlo M. ;

Tsuji, Masaharu ;

Ikeda, Ken-ichi .

SMALL, 2010, 6 (11) :1226-1233

[3] SOLUBILITY OF CARBON IN RHODIUM RUTHENIUM, IRIDIUM AND RHENIUM [J].

ARNOULT, WJ ;

MCLELLAN, RB .

SCRIPTA METALLURGICA, 1972, 6 (10) :1013-&

[4]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[5] EPITAXY OF FCC METALS ON DIELECTRIC SUBSTRATES [J].

BIALAS, H ;

HENEKA, K .

VACUUM, 1994, 45 (01) :79-87

[6] Growth and microstructural stability of epitaxial Al films on (0001) α-Al2O3 substrates [J].

Dehm, G ;

Inkson, BJ ;

Wagner, T .

ACTA MATERIALIA, 2002, 50 (20) :5021-5032

[7] Surface phase transitions during martensitic transformations of single-crystal Co [J].

Erbudak, M ;

Wetli, E ;

Hochstrasser, M ;

Pescia, D ;

Vvedensky, DD .

PHYSICAL REVIEW LETTERS, 1997, 79 (10) :1893-1896

[8] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[9] Optical detection and characterization of graphene by broadband spectrophotornetry [J].

Gray, Alexander ;

Balooch, Mehdi ;

Allegret, Stephane ;

De Gendt, Stefan ;

Wang, Wei-E .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (05)

[10] Effect of twin-boundaries on melting of aluminum [J].

Hayat, Sardar Sikandar ;

Choudhry, Muhammad A. ;

Ahmad, Sheikh A. .

JOURNAL OF MATERIALS SCIENCE, 2008, 43 (14) :4915-4920

← 1 2 3 →