The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers

被引：21

作者：

McCallum, JC ^{[1
]}

机构：

[1] Univ Melbourne, Sch Phys, Microanalyt Res Ctr, Parkville, Vic 3052, Australia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

基金：

澳大利亚研究理事会;

关键词：

solid phase epitaxy; silicon; dopant-enhanced SPE; crystallisation models;

D O I：

10.1016/S0168-583X(98)00671-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in the H-free environment provided by buried amorphous Si layers formed by MeV ion implantation. The dopant-enhanced SPE kinetics were studied in buried a-Si layers containing uniform As concentration profiles produced by multiple energy ion implantation to doses spanning the concentration range 1-28 x 10(19) As/cm(3) and the crystallisation rates were measured over the temperature range 460-660 degrees C using time-resolved reflectivity. The dopant-enhanced SPE data can be modelled by an extension of the Generalised Fermi Level Shifting model (GFLS) to take into account the degenerate semiconductor statistics on the crystalline Si side of the interface and by estimating the effect of band bending at the amorphous/crystalline (a/c) interface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：350 / 354

页数：5

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